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| MMBTSD2652W NPN Silicon Epitaxial Planar Transistor for low frequency amplifier and general purpose amplification application Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Symbol VCBO VCEO VEBO IC 1) ICP Ptot Tj TS Value 15 12 6 1.5 3 200 150 - 55 to + 150 Unit V V V A mW O C C O Single pulse, Pw = 1 ms Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 200 mA Collector Cutoff Current at VCB = 15 V Emitter Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Emitter Saturation Voltage at IC = 500 mA, IB = 25 mA Transition Frequency at VCE = 2 V, -IE = 200 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob Min. 270 15 12 6 Typ. 400 12 Max. 680 0.1 0.1 0.2 Unit A A V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 15/05/2007 MMBTSD2652W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 15/05/2007 |
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